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參數(shù)資料
| 型號： | BTA225-600BT |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3Q Hi-Com Triac |
| 封裝： | BTA225-600BT<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 132K |
| 代理商： | BTA225-600BT |
BTA225-600BT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 November 2011
2 of 13
NXP Semiconductors
BTA225-600BT
Three quadrant triacs high commutation
3. Ordering information
4. Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/
s.
Table 2.
Type number
Ordering information
Package
Name
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
BTA225-600BT SC-46
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
repetitive peak off-state voltage
I
T(RMS)
RMS on-state current
Limiting values
Conditions
Min
Max
600
25
Unit
V
A
[1]
-
full sine wave; T
mb
116
C;
see
Figure 4
and
5
full sine wave; T
j
= 25
C prior to
surge; see
Figure 2
and
3
t
p
= 20 ms
t
p
= 16.7 ms
t = 10 ms
I
TM
= 30 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
s
-
I
TSM
non-repetitive peak on-state current
-
-
-
-
200
220
200
100
A
A
A
2
s
A/
s
I
2
t
dI
T
/dt
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
40
-
2
5
5
0.5
+150
150
A
V
W
W
C
C
over any 20 ms period
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA225-600B | 3Q Hi-Com Triac |
| BTA225-800B | 3Q Hi-Com Triac |
| BTA225B-600B | 3Q Hi-Com Triac |
| BTA225B-800B | 3Q Hi-Com Triac |
| BTA312-600B | 3Q Hi-Com Triac |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA225-600BT,127 | 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA225-600C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA225-800B | 功能描述:雙向可控硅 RAIL 3Q TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA225-800B,127 | 功能描述:雙向可控硅 RAIL 3Q TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA225800B.127 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs Product specification |
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