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參數(shù)資料
| 型號(hào)： | BTA216X-800F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | CAT5E PATCH CORD 1 FOOT BLUE |
| 中文描述： | 800 V, 16 A, TRIAC |
| 封裝： | PLASTIC, SOT-186A, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 22K |
| 代理商： | BTA216X-800F |
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
These
devices
requirements
of
performance and gate sensitivity. The
"sensitivegate"Eseriesand"logiclevel"
Dseries areintended for interfacingwith
low power
drivers, including
controllers.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BTA216X-
BTA216X-
BTA216X-
600D
600E
600F
600
-
800E
800F
800
balance
commutation
the
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
I
T(RMS)
I
TSM
16
140
16
140
A
A
micro
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
600
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
38 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
140
150
98
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
T1
T2
G
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
October 1999
1
Rev 1.000
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