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參數(shù)資料
| 型號： | BTA216B-600E |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3Q Hi-Com Triac |
| 封裝： | BTA216B-600E<SOT404 (D2PAK)|<<http://www.nxp.com/packages/SOT404.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | BTA216B-600E |
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216B series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivatedguaranteedcommutationtriacsin
a plastic
envelope suitable for surface
mounting, intended for use in motor control
circuits or with other highly inductive loads.
These devices balance the requirements of
commutation
performance
sensitivity. The "sensitive gate" E series and
"logic level" D series are intended for
interfacing with low power drivers, including
micro controllers.
SYMBOL
PARAMETER
MAX.
UNIT
BTA216B-
BTA216B-
BTA216B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600D
600E
600F
600
V
DRM
V
and
gate
I
T(RMS)
I
TSM
A
A
16
140
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DRM
Repetitive peak off-state
voltages
-
600
1
V
I
T(RMS)
RMS on-state current
full sine wave;
T
≤
99 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
I
TSM
Non-repetitive peak
on-state current
-
-
140
150
98
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
-
A
2
s
A/
μ
s
I
GM
P
GM
P
G(AV)
-
-
-
2
5
A
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
3
mb
2
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
April 2002
1
Rev 2.000
相關PDF資料 |
PDF描述 |
|---|---|
| BTA216B-600F | 3Q Hi-Com Triac |
| BTA216X-600B | 3Q Hi-Com Triac |
| BTA216X-800B | 3Q Hi-Com Triac |
| BTA216X-600D | 3Q Hi-Com Triac |
| BTA216X-600E | 3Q Hi-Com Triac |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BTA216B-600E /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA216B-600E,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA216B-600F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA216B-600F /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA216B-600F,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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