參數(shù)資料
型號(hào): BTA212XSERIESC
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 三高減刑象限可控硅
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 50K
代理商: BTA212XSERIESC
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
Fig.12. Typical critical rate of change of commutating
current dI
com
/dt versus junction temperature.
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
BTA212
T2+ G+
T2+ G-
T2- G-
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
BT138
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.175 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT138
tp / s
Zth j-hs (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
bidirectional
unidirectional
with heatsink compound
without heatsink compound
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
20
40
60
80
100
120
140
1
10
100
1000
BTA212
Tj / C
dIcom/dt (A/ms)
September 1997
4
Rev 1.200
相關(guān)PDF資料
PDF描述
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