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參數(shù)資料
| 型號： | BTA212X-800B |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3Q Hi-Com Triac |
| 封裝： | BTA212X-800B<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,; |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 108K |
| 代理商： | BTA212X-800B |
Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
-
2500
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
junction to heatsink
full or half cycle
with heatsink compound
without heatsink compound
in free air
-
-
-
-
-
4.0
5.5
-
K/W
K/W
K/W
R
th j-a
Thermal resistance
junction to ambient
55
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
Gate trigger current
2
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
2
2
2
18
21
34
50
50
50
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
-
-
-
31
34
30
31
1.3
0.7
0.4
0.1
60
90
60
60
1.6
1.5
-
0.5
mA
mA
mA
mA
V
V
V
mA
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
= 12 V; I
GT
= 0.1 A
I
T
= 17 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
V
= 400 V; T
= 125 C; I
= 12 A;
without snubber; gate open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
1000
4000
-
V/
μ
s
dI
com
/dt
-
24
-
A/ms
t
gt
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
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| BTA212X-600D | 3Q Hi-Com Triac |
| BTA212X-600E | 3Q Hi-Com Triac |
| BTA212X-600F | 3Q Hi-Com Triac |
| BTA212X-800E | 3Q Hi-Com Triac |
| BTA216-600BT | 3Q Hi-Com Triac |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA212X-800B,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212X-800C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA212X-800E | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212X-800E,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212X-800F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
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