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參數(shù)資料
| 型號： | BTA212B-600F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3Q Hi-Com Triac |
| 封裝： | BTA212B-600F<SOT404 (SOT404)|<<http://www.nxp.com/packages/SOT404.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | BTA212B-600F |
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212B series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed
triacs in a plastic envelope suitable for
surface mounting intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the
requirements
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low
power
drivers,
controllers.
commutation
SYMBOL
PARAMETER
MAX. MAX
UNIT
BTA212B-
BTA212B-
BTA212B-
600D
600E
600F
600
800E
of
commutation
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
800
V
I
T(RMS)
I
TSM
12
95
12
95
A
A
including
micro
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
600
1
-800
800
V
DRM
Repetitive peak off-state
voltages
-
V
I
T(RMS)
RMS on-state current
full sine wave;
T
≤
99 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
12
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
95
105
45
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
P
GM
P
G(AV)
-
-
-
2
5
A
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
3
mb
2
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
October 2003
1
Rev 3.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA212B-800E | 3Q Hi-Com Triac |
| BTA212X-600B | 3Q Hi-Com Triac |
| BTA212X-800B | 3Q Hi-Com Triac |
| BTA212X-600D | 3Q Hi-Com Triac |
| BTA212X-600E | 3Q Hi-Com Triac |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA212B-600F /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212B-600F,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212B-600F118 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BTA212B-800B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA212B-800B /T3 | 功能描述:雙向可控硅 TAPE13 3Q TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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