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參數(shù)資料
| 型號： | BTA208XSERIESD.EANDF |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 三象限可控硅整流保證 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 69K |
| 代理商： | BTA208XSERIESD.EANDF |
December 1998
2
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other
highly inductive loads. These devices
balance
the
requirements
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intendedforinterfacingwith lowpower
drivers, including micro controllers.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA204S
(or BTA204M)
-
BTA204S
(or BTA204M)
-
BTA204S
(or BTA204M)
-
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
500D
500E
500F
500
600D
600E
600F
600
-
800E
800F
800
of
V
DRM
V
I
T(RMS)
I
TSM
4
4
4
A
A
25
25
25
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
107 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
4
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
25
27
3.1
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
2
3
tab
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
相關PDF資料 |
PDF描述 |
|---|---|
| BTA208XSERIESDEANDF | Transient Voltage Suppressor Diodes |
| BTA204S-600E | TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204S-800B | TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204S-800C | TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204S-800E | TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA20BW | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SNUBBERLESS TRIACS |
| BTA20C | 制造商:GESS 制造商全稱:GESS 功能描述:6-A Silicon Triacs For Power-Control and Power-Switching Applications |
| BTA20CW | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SNUBBERLESS TRIACS |
| BTA20D | 制造商:GESS 制造商全稱:GESS 功能描述:6-A Silicon Triacs For Power-Control and Power-Switching Applications |
| BTA20E | 制造商:GESS 制造商全稱:GESS 功能描述:6-A Silicon Triacs For Power-Control and Power-Switching Applications |
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