- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369519 > BTA208XSERIESB Transient Voltage Suppressor Diodes PDF資料下載
參數(shù)資料
| 型號(hào)： | BTA208XSERIESB |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 三高減刑象限可控硅 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | BTA208XSERIESB |
December 1998
3
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.14
MIN.
-
-
-
TYP.
-
-
75
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204S
(or BTA204M)
-
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
...E
UNIT
...D
...F
I
GT
Gate trigger current
2
-
-
-
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
I
L
Latching current
-
-
-
-
-
-
-
-
-
-
6
9
6
6
12
18
12
12
1.7
1.5
20
30
20
20
mA
mA
mA
mA
V
V
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
1.4
0.7
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
0.4
-
V
I
D
Off-state leakage
current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204S
(or BTA204M)
-
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 4 A;
dV
/dt = 20V/
μ
s; gate
open circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 4 A;
dV
/dt = 0.1V/
μ
s; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
MIN.
...E
30
TYP.
MAX.
UNIT
...D
20
...F
50
dV
D
/dt
Critical rate of rise of
off-state voltage
-
-
V/
μ
s
dI
com
/dt
Critical rate of change
of commutating current
1.0
2.0
2.5
-
-
A/ms
dI
com
/dt
Critical rate of change
of commutating current
5.0
-
-
-
-
A/ms
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA208XSERIESC | Transient Voltage Suppressor Diodes |
| BTA208XSERIESD.EANDF | Transient Voltage Suppressor Diodes |
| BTA208XSERIESDEANDF | Transient Voltage Suppressor Diodes |
| BTA204S-600E | TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204S-800B | TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA208XSERIESC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
| BTA208XSERIESD.EANDF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs guaranteed commutation |
| BTA208XSERIESDEANDF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs guaranteed commutation |
| BTA20BW | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SNUBBERLESS TRIACS |
| BTA20C | 制造商:GESS 制造商全稱:GESS 功能描述:6-A Silicon Triacs For Power-Control and Power-Switching Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。