參數(shù)資料
型號： BTA208S-800E
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： 3Q Hi-Com Triac
封裝： BTA208S-800E<SOT428 (SOT428)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數(shù)： 7/14頁
文件大小： 213K
代理商： BTA208S-800E
BTA208S-800E
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 14 April 2011
7 of 14
NXP Semiconductors
BTA208S-800E
3Q Hi-Com Triac
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
I
T
= 10 A; T
j
= 25 °C; see
Figure 10
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
see
Figure 11
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
see
Figure 11
V
D
= 800 V; T
j
= 125 °C
-
-
10
mA
-
-
10
mA
-
-
10
mA
I
L
latching current
-
-
25
mA
-
-
30
mA
-
-
30
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
-
-
-
25
1.65
1.5
mA
V
V
0.25
-
-
V
I
D
Dynamic characteristics
dV
D
/dt
off-state current
-
-
0.5
mA
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 535 V; T
j
= 110 °C; exponential
waveform; gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 0.1 V/μs; gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 10 V/μs; gate open circuit;
see
Figure 12
60
-
-
V/μs
dI
com
/dt
10
-
-
A/ms
5
-
-
A/ms
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參數(shù)描述
BTA208S-800E /T3 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BTA208S-800E,118 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BTA208S-800E/T3 制造商:NXP Semiconductors 功能描述:Thyristor TRIAC 800V 72A 3-Pin(2+Tab) DPAK T/R
BTA208S-800E118 制造商:NXP Semiconductors 功能描述:Triac
BTA208S-800F 制造商:NXP Semiconductors 功能描述:TRIAC HICOM 8A 800V DPAK 制造商:NXP Semiconductors 功能描述:TRIAC, HICOM, 8A, 800V, DPAK 制造商:NXP Semiconductors 功能描述:TRIAC, HICOM, 8A, 800V, DPAK; Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max (QI), Igt:25mA; On State RMS Current IT(rms):8A; Peak Non Rep Surge Current Itsm 50Hz:71A; Gate Trigger Voltage Max Vgt:1.5V; Peak ;RoHS Compliant: Yes
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