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參數(shù)資料
| 型號(hào)： | BTA208M-500C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Three quadrant triacs high commutation |
| 中文描述： | 500 V, 8 A, SNUBBERLESS TRIAC, TO-252 |
| 封裝： | PLASTIC, SOT-428, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 22K |
| 代理商： | BTA208M-500C |
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA208S series C
BTA208M series C
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.14
MIN.
-
-
-
TYP.
-
-
75
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
2
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ G-
T2- G-
2
2
2
-
-
-
35
35
35
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
-
-
-
-
-
-
-
20
30
20
15
1.65
1.5
-
0.5
mA
mA
mA
mA
V
V
V
mA
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
1.3
0.7
0.4
0.1
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
dI
com
/dt
Critical rate of change of
commutating current
t
gt
Gate controlled turn-on
time
CONDITIONS
V
= 67% V
; T
= 125 C; exponential
waveform; gate open circuit
V
= 400 V; T
= 125 C; I
T(RMS)
= 8 A; without
snubber; gate open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
MIN.
1000
TYP.
-
UNIT
V/
μ
s
3
14
A/ms
-
2
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
October 1997
2
Rev 1.000
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