參數(shù)資料
型號(hào): BTA208B-800C
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 晶閘管
英文描述: Three quadrant triacs high commutation(三象限雙向高換向可控硅)
中文描述: 800 V, 8 A, SNUBBERLESS TRIAC, TO-263
封裝: PLASTIC, SOT-404, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 22K
代理商: BTA208B-800C
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA208B series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacsinaplasticenvelopeintendedfor
use in circuits where high static and
dynamicdV/dtandhighdI/dtcanoccur.
These devices will commutate the full
ratedrmscurrentatthemaximumrated
junction temperature without the aid of
a snubber.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA208- 500C
600C
600
800C
800
V
DRM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak
on-state current
500
V
I
T(RMS)
I
TSM
8
65
8
65
8
65
A
A
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
102 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
8
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
65
71
21
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
3
mb
2
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
October 1997
1
Rev 1.000
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