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參數(shù)資料
| 型號(hào)： | BTA208B-600F |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅) |
| 中文描述： | 600 V, 8 A, TRIAC, TO-263 |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 22K |
| 代理商： | BTA208B-600F |
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA208B series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
minimum footprint, FR4 board
MIN.
-
-
-
TYP.
-
-
55
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
...E
UNIT
BTA208B-
...D
...F
I
GT
Gate trigger current
2
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V;
I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
2
2
2
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
I
L
Latching current
-
-
-
-
-
-
-
-
-
-
6
9
6
6
12
18
12
12
1.65
1.5
-
30
45
30
30
1.65
mA
mA
mA
mA
V
V
V
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
1.3
0.7
0.4
1.65
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...E
TYP.
MAX.
UNIT
BTA208B-
...D
...F
50
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 8 A;
dV
/dt = 20v/
μ
s; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
10
20
-
-
V/
μ
s
dI
com
/dt
Critical rate of change of
commutating current
1.8
2.5
3.5
-
-
A/ms
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.000
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