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參數(shù)資料
| 型號： | BTA204X-800E,127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| 中文描述： | 800 V, 4 A, TRIAC |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 75K |
| 代理商： | BTA204X-800E,127 |
9397 750 14491
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2005
2 of 12
Philips Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
s.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA204X-600D
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 ‘full pack’
SOT186A
BTA204X-600E
BTA204X-600F
BTA204X-800E
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA204X-600D
[1] -
600
V
BTA204X-600E
[1] -
600
V
BTA204X-600F
[1] -
600
V
BTA204X-800E
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Ths ≤ 92 °C;
-4
A
ITSM
non-repetitive peak on-state current
full sine wave;
Tj =25 °C prior to surge;
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I2tI2t for fusing
t = 10 ms
-
3.1
A2S
dlT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/s
-
100
A/
s
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
40
+150
°C
Tj
junction temperature
-
125
°C
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