參數(shù)資料
型號: BTA204X-500F
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅)
中文描述: 500 V, 4 A, TRIAC
文件頁數(shù): 1/7頁
文件大小: 49K
代理商: BTA204X-500F
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic full pack envelope,
intended for use in motor control
circuits or with other highly inductive
loads. These devices balance the
requirements
of
performance and gate sensitivity. The
"sensitive gate" E series and "logic
level" D series are intended for
interfacing with low power drivers,
including micro controllers.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA204X-
BTA204X-
BTA204X-
500D
500E
500F
500
600D
600E
600F
600
-
800E
800F
800
commutation
V
DRM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
V
I
T(RMS)
I
TSM
4
4
4
A
A
25
25
25
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
92 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
4
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
25
27
3.1
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
T1
T2
G
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
December 1998
1
Rev 1.000
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