參數(shù)資料
型號: BTA204WD
廠商: NXP Semiconductors N.V.
英文描述: Three quadrant triacs guaranteed commutation
中文描述: 三象限可控硅整流保證
文件頁數(shù): 2/8頁
文件大小: 65K
代理商: BTA204WD
December 1998
2
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other
highly inductive loads. These devices
balance
the
requirements
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intendedforinterfacingwith lowpower
drivers, including micro controllers.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA204W-
BTA204W-
BTA204W-
500D
500E
500F
500
600D
600E
600F
600
-
800E
800F
800
of
V
DRM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
V
I
T(RMS)
I
TSM
1
1
1
A
A
10
10
10
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
108 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A;
I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
1
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
10
11
0.5
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
T1
T2
G
4
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
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