參數(shù)資料
型號: BTA204W-500D
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: PT 10C 10#20 PIN PLUG
中文描述: 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: PLASTIC, SOT-223, 4 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 65K
代理商: BTA204W-500D
December 1998
3
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-sp
Thermal resistance
junction to solder point
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
MIN.
-
TYP.
-
MAX.
15
UNIT
K/W
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
...E
UNIT
BTA204W-
...D
...F
I
GT
Gate trigger current
2
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 2 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
-
-
-
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
I
L
Latching current
-
-
-
-
-
-
-
-
-
-
6
9
6
6
12
18
12
12
1.5
1.5
-
20
30
20
20
mA
mA
mA
mA
V
V
V
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
1.2
0.7
0.4
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...E
30
TYP.
MAX.
UNIT
BTA204W-
...D
20
...F
50
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 1 A;
dV
/dt = 20V/
μ
s; gate
open circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 1 A;
dV
/dt = 0.1V/
μ
s; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
-
-
V/
μ
s
dI
com
/dt
Critical rate of change of
commutating current
1.0
2.0
2.5
-
-
A/ms
dI
com
/dt
Critical rate of change of
commutating current
5.0
-
-
-
-
A/ms
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
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