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參數(shù)資料
| 型號： | BTA204S-800E |
| 英文描述： | TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 |
| 中文描述： | 可控硅| 800V的五（DRM）的| 4A條口（T）的有效值|采用SOT - 428 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BTA204S-800E |
December 1998
2
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other
highly inductive loads. These devices
balance
the
requirements
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intendedforinterfacingwith lowpower
drivers, including micro controllers.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA204S
(or BTA204M)
-
BTA204S
(or BTA204M)
-
BTA204S
(or BTA204M)
-
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
500D
500E
500F
500
600D
600E
600F
600
-
800E
800F
800
of
V
DRM
V
I
T(RMS)
I
TSM
4
4
4
A
A
25
25
25
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
107 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
4
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
25
27
3.1
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
2
3
tab
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
相關PDF資料 |
PDF描述 |
|---|---|
| BTA204W_SERIES_B_AND_C | Transient Voltage Suppressor Diodes |
| BTA204WSERIESBANDC | Transient Voltage Suppressor Diodes |
| BTA204WSERIESD.EANDF | Transient Voltage Suppressor Diodes |
| BTA208-600D | Transient Voltage Suppressor Diodes |
| BTA208-600E | Transient Voltage Suppressor Diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BTA204S-800E /T3 | 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA204S-800E,118 | 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA204S-800E/T3 | 制造商:NXP Semiconductors 功能描述:Thyristor TRIAC 800V 27A 3-Pin(2+Tab) DPAK T/R |
| BTA204S-800E118 | 制造商:NXP Semiconductors 功能描述:Triac |
| BTA204S-800F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
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