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參數(shù)資料
| 型號： | BTA204S-500D |
| 英文描述： | TRIAC|500V V(DRM)|4A I(T)RMS|SOT-428 |
| 中文描述： | 可控硅| 500V五（DRM）的| 4A條口（T）的有效值|采用SOT - 428 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 69K |
| 代理商： | BTA204S-500D |
December 1998
3
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.14
MIN.
-
-
-
TYP.
-
-
75
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204S
(or BTA204M)
-
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
...E
UNIT
...D
...F
I
GT
Gate trigger current
2
-
-
-
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
I
L
Latching current
-
-
-
-
-
-
-
-
-
-
6
9
6
6
12
18
12
12
1.7
1.5
20
30
20
20
mA
mA
mA
mA
V
V
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
1.4
0.7
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
0.4
-
V
I
D
Off-state leakage
current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204S
(or BTA204M)
-
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 4 A;
dV
/dt = 20V/
μ
s; gate
open circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 4 A;
dV
/dt = 0.1V/
μ
s; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
MIN.
...E
30
TYP.
MAX.
UNIT
...D
20
...F
50
dV
D
/dt
Critical rate of rise of
off-state voltage
-
-
V/
μ
s
dI
com
/dt
Critical rate of change
of commutating current
1.0
2.0
2.5
-
-
A/ms
dI
com
/dt
Critical rate of change
of commutating current
5.0
-
-
-
-
A/ms
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
相關PDF資料 |
PDF描述 |
|---|---|
| BTA204S-500E | TRIAC|500V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204S-600B | TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204S-600C | TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204WSERIESDEANDF | Three quadrant triacs guaranteed commutation |
| BTA204X_SERIES_B_AND_C | Transient Voltage Suppressor Diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BTA204S-500E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA204S-500F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA204S-600B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three-quadrant triacs high commutation |
| BTA204S-600B /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA204S-600B,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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