參數(shù)資料
型號: BTA202X-800E
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: 2 A Three-quadrant high commutation triac
封裝: BTA202X-800E<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<Always Pb-free,;
文件頁數(shù): 2/12頁
文件大?。?/td> 81K
代理商: BTA202X-800E
BTA202X_SER_D_E_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
2 of 12
NXP Semiconductors
BTA202X series D and E
2 A Three-quadrant triacs high commutation
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base (isolated)
Simplified outline
Graphic symbol
SOT186A (TO-220F)
3
2
1
mb
sym051
T1
G
T2
Table 2.
Type number
Ordering information
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220 ‘full pack’
Version
SOT186A
BTA202X-600D
BTA202X-600E
BTA202X-800D
BTA202X-800E
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
repetitive peak off-state voltage
Limiting values
Conditions
BTA202X-600D; BTA202X-600E
BTA202X-800D; BTA202X-800E
full sine wave; T
h
110
°
C; see
Figure 4
and
5
full sine wave; T
j
= 25
°
C prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
t
p
= 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
Min
Max
600
800
2
Unit
V
V
A
[1]
-
I
T(RMS)
RMS on-state current
-
I
TSM
non-repetitive peak on-state current
-
-
-
-
14
15.4
0.98
100
A
A
A
2
s
A/
μ
s
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
I
GM
P
GM
peak gate current
peak gate power
-
-
2
5
A
W
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