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參數(shù)資料
| 型號： | BTA16-xxxSW |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Performance Logic Level Triacs(高性能邏輯電平雙向可控硅) |
| 中文描述： | 高性能邏輯電平雙向（高性能邏輯電平雙向可控硅） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | BTA16-XXXSW |
BTA16-xxxSW
BTB16-xxxSW
September 1998 - Ed: 3B
HIGH PERFORMANCE LOGIC LEVEL TRIACS
TO220AB
I
T(RMS)
= 16A
LOGIC LEVEL TRIGGERING: I
GT
≤
10mA
HIGH SURGE CAPABILITY
FEATURES
The BTA/BTB16-xxxSW triacs are using a high
performance glass passivated technology. These
triacs are designed for applications requiring high
inrush current performances such as fridge motor
control, magnetron supply of microwave ovens,
halogen range cookers, etc...). The high gate sen-
sitivity makes them perfectly suited for direct gate
triggering by microcontrollers and other logic cir-
cuits.
DESCRIPTION
A2
A1
G
Symbol
I
T(RMS)
Parameter
Value
16
Unit
A
RMS on-state current
(360
°
conduction angle)
BTA
Tc = 85
°
C
Tc = 105
°
C
tp = 8.3 ms
BTB
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
170
A
tp = 10 ms
160
I
2
t
I
2
t value for fusing
tp = 10 ms
128
A
2
s
dI/dt
Critical rate of rise of on-state current
Gate supply : I
G
= 20mA , tr
≤
100ns
Repetitive
F = 100 Hz
50
A/
μ
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
°
C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
BTA / BTB16-xxxSW
Unit
600
600
700
700
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125
°
C
V
1/5
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