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參數(shù)資料
| 型號(hào)： | BTA140SERIES |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Triacs |
| 中文描述： | 雙向可控硅 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | BTA140SERIES |
Philips Semiconductors
Product specification
Triacs
BTA140 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
50
100
150
0
1
2
3
4
5
BTA140
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
0
10
20
30
40
50
60
70
80
BTA140
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.073 V
typ
max
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BTA140
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
bidirectional
unidirectional
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
9.0
15
Tj / C
12
dV/dt (V/us)
7.0
dIcom/dt =
25 A/ms
20
off-state dV/dt limit
September 1997
4
Rev 1.200
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