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參數(shù)資料
| 型號： | BTA140B-600 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs |
| 中文描述： | 600 V, 25 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263 |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 47K |
| 代理商： | BTA140B-600 |
Philips Semiconductors
Product specification
Triacs
BTA140 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
in free air
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.0
1.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
6
10
11
23
35
35
35
70
mA
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
8
30
18
15
40
60
40
60
mA
mA
mA
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
T2+
T2-
-
-
-
-
7
12
1.3
0.7
0.4
0.1
30
30
1.55
1.5
-
0.5
mA
mA
V
V
V
mA
V
T
V
GT
On-state voltage
Gate trigger voltage
I
T
= 30 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
dV
com
/dt
Critical rate of change of
commutating voltage
t
gt
Gate controlled turn-on
time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
= 95 C; I
= 25 A;
dI
com
/dt = 9 A/ms; gate open circuit
I
TM
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
MIN.
100
TYP.
300
MAX.
-
UNIT
V/
μ
s
-
10
-
V/
μ
s
-
2
-
μ
s
September 1997
2
Rev 1.200
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