參數(shù)資料
型號: BTA08-800TC
廠商: 意法半導(dǎo)體
元件分類: 運(yùn)動(dòng)控制電子
英文描述: 250MHz Wideband Transconductance Amplifier with Differential Output
中文描述: 8A條雙向可控硅
文件頁數(shù): 6/10頁
文件大?。?/td> 143K
代理商: BTA08-800TC
BTA/BTB08 and T8 Series
6/10
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I2t.
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-1:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
Fig. 8-2:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10:
DPAK and D
2
PAK Thermal resistance
junction to ambient versus copper surface under
tab (printed circuit board FR4, copper thickness:
35
μ
m).
0.01
0.10
1.00
10.00
10
100
1000
tp (ms)
ITSM (A), I2t (A2s)
Tj initial=25°C
ITSM
I2t
dI/dt limitation:
50A/μs
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
Tj(°C)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T835/CW/BW
TW
T810/SW
(dV/dt)c (V/μs)
0.1
1.0
10.0
100.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
C
B
(dV/dt)c (V/μs)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj(°C)
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
90
100
Rth(j-a) (°C/W)
DPAK
D2PAK
S(cm2)
相關(guān)PDF資料
PDF描述
BTA08BW Snubberless Triacs(雙向可控硅)
BTB08BW Snubberless Triacs(雙向可控硅)
BTA08B Standard Triacs(標(biāo)準(zhǔn)雙向可控硅)
BTA10B Standard Triacs(標(biāo)準(zhǔn)雙向可控硅)
BTB10C Standard Triacs(標(biāo)準(zhǔn)雙向可控硅)
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