參數(shù)資料
型號(hào): BT300S
廠商: NXP Semiconductors N.V.
英文描述: Thyristors
中文描述: 晶閘管
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 52K
代理商: BT300S
Philips Semiconductors
Product specification
Thyristors
BT300S series
BT300M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2.2
UNIT
K/W
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 12 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
10
1.35
0.6
0.4
0.1
MAX.
15
40
20
1.6
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
CONDITIONS
V
= 67% V
; T
j
= 125 C;
exponential waveform.
MIN.
TYP.
MAX.
UNIT
Gate open circuit
R
= 100
50
200
-
100
1000
2
-
-
-
V/
μ
s
V/
μ
s
μ
s
t
gt
Gate controlled turn-on
time
Circuit commutated
turn-off time
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 12 A; V
R
/dt = 30 A/
μ
s;
dV
D
/dt = 50 V/
μ
s; R
GK
= 100
t
q
-
70
-
μ
s
September 1997
2
Rev 1.100
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BT300S-600R,118 功能描述:SCR TAPE13 SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube