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參數(shù)資料
| 型號： | BT300M |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BT300M |
Philips Semiconductors
Product specification
Thyristors
BT300S series
BT300M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2.2
UNIT
K/W
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 12 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
10
1.35
0.6
0.4
0.1
MAX.
15
40
20
1.6
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
CONDITIONS
V
= 67% V
; T
j
= 125 C;
exponential waveform.
MIN.
TYP.
MAX.
UNIT
Gate open circuit
R
= 100
50
200
-
100
1000
2
-
-
-
V/
μ
s
V/
μ
s
μ
s
t
gt
Gate controlled turn-on
time
Circuit commutated
turn-off time
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 12 A; V
R
/dt = 30 A/
μ
s;
dV
D
/dt = 50 V/
μ
s; R
GK
= 100
t
q
-
70
-
μ
s
September 1997
2
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BT300M-500R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT300M-600R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT300M-800R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT300MSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT300S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
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