參數(shù)資料
型號: BT234X-600E
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: 4Q Triac
中文描述: 4Q雙向可控硅
封裝: BT234X-600E<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<,;
文件頁數(shù): 7/14頁
文件大?。?/td> 182K
代理商: BT234X-600E
BT234X-600E
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 October 2011
7 of 14
NXP Semiconductors
BT234X-600E
4Q Triac
7.
Characteristics
Table 7.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
I
T
= 6 A; T
j
= 25 °C; see
Figure 10
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
see
Figure 11
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
see
Figure 11
V
D
= 600 V; T
j
= 125 °C
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
-
25
mA
I
L
latching current
-
-
15
mA
-
-
25
mA
-
-
15
mA
-
-
15
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
-
1.3
0.7
15
1.5
1.5
mA
V
V
0.25
0.4
-
V
I
D
Dynamic characteristics
dV
D
/dt
off-state current
-
0.1
0.5
mA
rate of rise of off-state
voltage
rate of change of
commutating voltage
V
DM
= 402 V; T
j
= 125 °C; exponential
waveform; gate open circuit
V
D
= 400 V; T
j
= 125 °C;
dI
com
/dt = 1.8 A/ms; I
T
= 4 A; gate open
circuit
V
D
= 400 V; I
T(RMS)
= 4 A;
dV
com
/dt = 20 V/μs; (snubberless
condition); gate open circuit
I
TM
= 6 A; V
D
= 600 V; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs
80
-
-
V/μs
dV
com
/dt
15
-
-
V/μs
dI
com
/dt
rate of change of
commutating current
1.5
-
-
A/ms
t
gt
gate-controlled turn-on
time
-
2
-
μs
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