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參數(shù)資料
| 型號： | BT169B |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCR |
| 封裝： | BT169B<SOT54 (TO-92)|<<http://www.nxp.com/packages/SOT54.html<1<week 5, 2005,; |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 129K |
| 代理商： | BT169B |
BT169_SER
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
2 of 13
NXP Semiconductors
BT169 series
Thyristor logic level
3. Ordering information
4. Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/
s.
Table 2.
Type number
Ordering information
Package
Name
-
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BT169B
BT169D
BT169G
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
, V
RRM
repetitive peak off-state voltages
BT169B
BT169D
BT169G
I
T(AV)
average on-state current
Limiting values
Conditions
Min
Max
Unit
[1]
-
200
400
600
0.5
V
V
V
A
[1]
-
[1]
-
half sine wave;
T
lead
83
C;
see
Figure 1
all conduction angles;
see
Figure 4
and
5
half sine wave;
T
j
= 25
C prior to
surge;
see
Figure 2
and
3
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/
s
-
I
T(RMS)
RMS on-state current
-
0.8
A
I
TSM
non-repetitive peak on-state current
-
-
-
-
8
9
0.32
50
A
A
A
2
s
A/
s
I
2
t
dI
T
/dt
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
40
-
1
5
5
2
0.1
+150
125
A
V
V
W
W
C
C
over any 20 ms period
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT169D | SCR |
| BT169G | SCR |
| BT169D-L | SCR |
| BT169G-L | SCR |
| BT169H | SCR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT169B AMO | 功能描述:SCR AMMORA SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT169B,126 | 功能描述:SCR AMMORA SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT169B/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR 0.8A SOT-54 |
| BT169BG-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
| BT169BG-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
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