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參數(shù)資料
| 型號： | BT168GW |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Logic level thyristor |
| 中文描述： | 邏輯電平可控硅 |
| 封裝： | BT168GW<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 35, 2003,; |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 128K |
| 代理商： | BT168GW |
BT168GW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 October 2011
2 of 12
NXP Semiconductors
BT168GW
Thyristors; logic level for RCD/GFI/LCCB applications
4. Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/
s.
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
, V
RRM
repetitive peak off-state voltage
I
T(AV)
average on-state current
Limiting values
Conditions
Min
Max
600
0.63
Unit
V
A
[1]
-
half sine wave; T
sp
112
C;
see
Figure 1
all conduction angles;
see
Figure 4
and
5
half sine wave; T
j
= 25
C prior to
surge; see
Figure 2
and
3
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/
s
-
I
T(RMS)
RMS on-state current
-
1
A
I
TSM
non-repetitive peak on-state current
-
-
-
-
8
9
0.32
50
A
A
A
2
s
A/
s
I
2
t
dI
T
/dt
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
40
-
1
5
5
2
0.1
+150
125
A
V
V
W
W
C
C
over any 20 ms period
a = form factor = I
T(RMS)
/I
T(AV)
.
Total power dissipation as a function of average on-state current; maximum values
Fig 1.
I
T(AV)
(A)
0
0.8
0.6
0.4
0.2
001aab496
0.2
0.6
1
P
tot
(W)
0
119
113
110
T
sp(max)
(
°
C)
125
4
0.4
0.8
116
122
a =
1.57
1.9
2.8
2.2
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BT168GW,115 | 功能描述:SCR TAPE-7 TRIAC RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT168GWF | 制造商:NXP Semiconductors 功能描述:THYRISTOR600VSOT223 制造商:NXP Semiconductors 功能描述:THYRISTOR,600V,SOT223 制造商:NXP Semiconductors 功能描述:THYRISTOR,600V,SOT223; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200A; Current It av:630mA; On State RMS Current IT(rms):1A; Peak Non Rep Surge Current Itsm 50Hz:8A; Holding Current Max Ih:10mA; ;RoHS Compliant: Yes |
| BT168GWF,115 | 功能描述:SCR 600V 1A SOT223 RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT168SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
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