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參數(shù)資料
| 型號： | BT152X_SERIES |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 38K |
| 代理商： | BT152X_SERIES |
Philips Semiconductors
Product specification
Thyristors
BT152 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic
envelope,
intended
applications
requiring
bidirectional
blocking
capability and high thermal cycling
performance.
Typical
include motor control, industrial and
domestic lighting, heating and static
switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
use
in
high
BT152-
400R
450
600R
650
800R
800
voltage
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
applications
13
20
200
13
20
200
13
20
200
A
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-400R -600R -800R
450
1
650
1
V
DRM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
-
800
V
I
T(AV)
I
T(RMS)
I
TSM
half sine wave; T
≤
103 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 50 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
-
13
20
A
A
-
-
-
-
200
220
200
200
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
5
5
5
A
V
V
W
W
C
C
20
0.5
150
125
over any 20 ms period
-40
-
a
k
g
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
March 1997
1
Rev 1.200
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