參數(shù)資料
型號(hào): BT152X-600R
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Thyristor
封裝: BT152X-600R<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 110K
代理商: BT152X-600R
Semiconductors
Product specification
Thyristors
BT152X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
-
2500
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
junction to heatsink
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
with heatsink compound
-
-
4.0
K/W
R
th j-hs
without heatsink compound
-
-
5.5
K/W
R
th j-a
in free air
-
55
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
I
L
I
H
V
T
V
GT
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 40 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
-
-
-
-
-
3
25
15
1.4
0.6
0.4
0.2
32
80
60
1.75
1.5
-
1.0
mA
mA
mA
V
V
V
mA
0.25
-
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
V
= 67% V
; T
= 125 C;
exponential waveform gate open circuit
V
D
= V
; I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s;
I
TM
= 40 A
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 50 A; V
/dt = 30 A/
μ
s;
dV
D
/dt = 50 V/
μ
s; R
GK
= 100
Ω
200
300
-
V/
μ
s
t
gt
-
2
-
μ
s
t
q
-
70
-
μ
s
October 1997
2
Rev 1.100
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