參數(shù)資料
型號(hào): BT151UC
廠商: NXP Semiconductors N.V.
英文描述: Thyristors
中文描述: 晶閘管
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 43K
代理商: BT151UC
Philips Semiconductors
Product specification
Thyristors
BT151U series C
Fig.1. Maximum on-state dissipation, P
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.4. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
100 C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
2
4
6
8
0
5
10
15
1.9
2.2
2.8
4
IT(AV) (A)
Ptot
(W)
Tmb(max)
(
°
C)
125
118.5
112
105.5
30
4
conduction
(
α
)
form
60
90
120
180
2.8
2.2
1.9
1.57
30
4.0
α
a = 1.57
1
10
100
1000
0
20
40
60
80
100
120
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
10
10us
100
1000
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
5
10
15
Tmb (
°
C)
IT(RMS)
(A)
104
C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
April 2004
3
Rev 1.000
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