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參數(shù)資料
| 型號： | BT151M-650R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors |
| 中文描述： | 12 A, 650 V, SCR |
| 封裝： | PLASTIC, SOT-428, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | BT151M-650R |
Philips Semiconductors
Product specification
Thyristors
BT151S series
BT151M series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT151
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
5
10
15
20
25
30
BT151
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
BT145
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT151S
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT151
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
September 1997
4
Rev 1.100
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| BT151M-800R | CAP METAL POLYPRO .27UF 630V 3% |
| BT151M | Thyristors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT151M-800R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151MSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151S_800R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151S_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors |
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