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參數(shù)資料
| 型號(hào)： | BT151F-650 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors |
| 中文描述： | 9 A, 650 V, SCR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 45K |
| 代理商： | BT151F-650 |
Philips Semiconductors
Product specification
Thyristors
BT151F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated thyristors in a full
pack, plastic envelope, intended for
use in applications requiring high
bidirectional
blocking
capability and high thermal cycling
performance.
Typical
include motor control, industrial and
domestic lighting, heating and static
switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BT151F-
500
500
650
650
800
800
voltage
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
applications
5.7
9
100
5.7
9
100
5.7
9
100
A
A
A
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-650
650
1
UNIT
-500
500
1
-800
800
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
V
half sine wave; T
≤
87 C
all conduction angles
half sine wave; T
= 125 C prior
to surge; with reapplied V
DRM(max)
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
5.7
9
A
A
-
-
-
-
100
110
50
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
2
5
5
5
A
V
V
W
W
C
C
over any 20 ms period
0.5
150
125
-40
-
a
k
g
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
February 1996
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT151F-800 | Thyristors |
| BT151F | Thyristors |
| BT151MSERIES | Thyristors |
| BT151M-500R | Thyristors |
| BT151M-650R | Thyristors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT151F-650R | 制造商:NXP Semiconductors 功能描述:THYRISTOR 12A 650V SOT-186 |
| BT151F-800 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151FSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151G-5-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
| BT151G-5-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
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