參數(shù)資料
型號: BT151
廠商: NXP Semiconductors N.V.
英文描述: Thyristors
中文描述: 晶閘管
文件頁數(shù): 4/6頁
文件大小: 43K
代理商: BT151
Philips Semiconductors
Product specification
Thyristors
BT151U series C
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
10
20
30
VT (V)
IT
(A)
typ
max
Vo = 1.06 V
Rs = 0.0304 ohms
Tj = 125
°
C
Tj = 25
°
C
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
BT145
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp (s)
Zth(j-mb)
(K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
April 2004
4
Rev 1.000
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