- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378420 > BT151-650R (NXP Semiconductors N.V.) SCR PDF資料下載
參數(shù)資料
| 型號(hào)： | BT151-650R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCR |
| 封裝： | BT151-650R<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | BT151-650R |
BT151-650R_5
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 27 February 2009
3 of 11
NXP Semiconductors
BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
Conditions
Min
-
Max
650
Unit
V
V
RRM
-
650
V
I
T(AV)
half sine wave; T
mb
≤
109 °C; see
Figure 3
-
7.5
A
I
T(RMS)
half sine wave; T
mb
≤
109 °C; see
Figure 1
; see
Figure 2
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/μs
-
12
A
dI
T
/dt
rate of rise of on-state
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
-
50
A/μs
I
GM
P
GM
T
stg
T
j
I
TSM
-
-
-40
-
-
-
2
5
150
125
132
120
A
W
°C
°C
A
A
half sine wave; t
p
= 8.3 ms; T
j(init)
= 25 °C
half sine wave; t
p
= 10 ms; T
j(init)
= 25 °C; see
Figure 4
; see
Figure 5
t
p
= 10 ms; sine-wave pulse
over any 20 ms period
I
2
t
P
G(AV)
V
RGM
I2t for fusing
average gate power
peak reverse gate
voltage
-
-
-
72
0.5
5
A
2
s
W
V
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
Fig 2.
RMS on-state current as a function of mounting
base temperature; maximum values
surge duration (s)
10
2
10
1
10
1
001aaa954
10
15
5
20
25
I
T(RMS)
(A)
0
T
mb
(
°
C)
50
150
100
0
50
001aaa999
8
4
12
16
I
T(RMS)
(A)
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT151-800R | SCR |
| BT151S-500L | SCR |
| BT151S-500R | SCR |
| BT151S-650L | SCR |
| BT151S-650R | Thyristor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT151-650R,127 | 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151-650R | 制造商:NXP Semiconductors 功能描述:THYRISTOR 7.5A 650V TO-220 |
| BT151-650R/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR 12A 650V |
| BT151-650R127 | 制造商:NXP Semiconductors 功能描述:Thyristor |
| BT151-800C | 功能描述:SCR THYRISTOR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。