參數(shù)資料
型號: BT151-500L
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: SCR
封裝: BT151-500L<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<Always Pb-free,;
文件頁數(shù): 6/11頁
文件大?。?/td> 153K
代理商: BT151-500L
BT151-500L_5
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 March 2009
6 of 11
NXP Semiconductors
BT151-500L
SCR, 12 A, 5mA, 500 V, SOT78
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; T
j
= 25 °C; I
T
= 100 mA; see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
V
D
= 12 V; T
j
= 25 °C; see
Figure 10
I
T
= 23 A; T
j
= 25 °C; see
Figure 11
I
T
= 100 mA; V
D
= 12 V; T
j
= 25 °C; see
Figure 12
I
T
= 100 mA; V
D
= 500 V; T
j
= 125 °C
V
D
= 500 V; T
j
= 125 °C
V
R
= 500 V; T
j
= 125 °C
-
2
5
mA
I
L
I
H
V
T
V
GT
latching current
holding current
on-state voltage
gate trigger voltage
-
-
-
-
10
7
1.4
0.6
40
20
1.75
1.5
mA
mA
V
V
0.25
-
-
0.4
0.1
0.1
-
0.5
0.5
V
mA
mA
I
D
I
R
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
off-state current
reverse current
V
DM
= 335 V; T
j
= 125 °C; exponential
waveform; gate open circuit
V
DM
= 335 V; T
j
= 125 °C; R
GK
= 100
;
exponential waveform; see
Figure 7
I
TM
= 40 A; V
D
= 500 V; I
G
= 100 mA;
dI
G
/dt = 5 A/μs; T
j
= 25 °C
V
DM
= 335 V; T
j
= 125 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/μs;
dV
D
/dt = 50 V/μs; R
GK
= 100
50
130
-
V/μs
200
1000
-
V/μs
t
gt
gate-controlled turn-on
time
commutated turn-off
time
-
2
-
μs
t
q
-
70
-
μs
Fig 7.
Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
Fig 8.
Normalized gate trigger current as a function of
junction temperature
001aaa949
10
3
10
2
10
4
dV
D
/dt
(V/
μ
s)
10
T
j
(
°
C)
0
150
100
50
(2)
(1)
T
j
(
°
C)
50
150
100
0
50
001aaa952
1
2
3
0
I
GT
I
GT(25
°
C)
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