- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378420 > BT151-500C (NXP Semiconductors N.V.) SCR PDF資料下載
參數(shù)資料
| 型號： | BT151-500C |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCR |
| 封裝： | BT151-500C<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | BT151-500C |
Semiconductors
Product specification
Thyristors
BT151 series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
bidirectional
blocking
capability and highthermal cycling
performance. Typical applications
include motor control, industrial
and domestic lighting, heating and
static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
high
BT151-
500C
500
650C
650
800C
800
voltage
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBO
L
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500C
500
1
-650C
650
1
-800C
800
V
DRM
,
V
RRM
I
T(AV)
Repetitive peak
off-state voltages
-
V
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
half sine wave; T
mb
≤
109 C
-
7.5
A
I
T(RMS)
I
TSM
all conduction angles
half sine wave; T
j
= 25 C
prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
-
12
A
-
-
-
-
100
110
50
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of I
TM
= 20 A; I
= 50 mA;
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate
voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
dI
G
/dt = 50 mA/
μ
s
I
GM
V
GM
V
RGM
-
-
-
2
5
5
A
V
V
P
GM
P
G(AV)
T
stg
T
j
-
-
5
W
W
C
C
over any 20 ms period
0.5
150
125
-40
-
a
k
g
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
April 2004
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT151-650C | Thyristor |
| BT151-800C | Thyristor |
| BT151-500L | SCR |
| BT151-500RT | SCR |
| BT151-500R | SCR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT151-500C,127 | 功能描述:SCR THYRISTOR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151-500C127 | 制造商:NXP Semiconductors 功能描述:Thyristor |
| BT151-500L | 功能描述:SCR RAIL-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151-500L,127 | 功能描述:SCR RAIL-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151-500R | 制造商:NXP Semiconductors 功能描述:Bulk 制造商:NXP Semiconductors 功能描述:THYRISTOR 7.5A 500V TO-220 制造商:NXP Semiconductors 功能描述:THYRISTOR, 7.5A, 500V, TO-220 制造商:NXP Semiconductors 功能描述:Thyristor SCR 500V 132A 3-Pin(3+Tab) TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。