參數(shù)資料
型號(hào): BT151-1000RT
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: SCR
封裝: BT151-1000RT<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<Always Pb-free,;
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 70K
代理商: BT151-1000RT
BT151-1000RT_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
6 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
6.
Characteristics
Table 5.
T
j
= 25
°
C unless otherwise stated.
Symbol
Parameter
Static characteristics
I
GT
gate trigger current
I
L
latching current
Characteristics
Conditions
Min
Typ
Max
Unit
V
D
= 12 V; I
T
= 100 mA; see
Figure 8
V
D
= 12 V; I
GT
= 100 mA; see
Figure 10
V
D
= 12 V; I
GT
= 100 mA; see
Figure 11
I
T
= 23 A
I
T
= 100 mA; see
Figure 7
V
D
= 12 V
V
D
= V
DRM(max)
; T
j
= 150
°
C
V
R
= V
DRM(max)
; T
j
= 150
°
C
V
R
= V
RRM(max)
; T
j
= 150
°
C
2
-
-
-
15
40
mA
mA
I
H
holding current
-
-
20
mA
V
T
V
GT
on-state voltage
gate trigger voltage
-
1.4
1.75
V
-
0.25
-
-
0.6
0.4
0.5
0.5
1.5
-
2.5
2.5
V
V
mA
mA
I
D
I
R
Dynamic characteristics
dV
D
/dt
off-state current
reverse current
rate of rise of off-state
voltage
V
DM
= 0.67
×
V
DRM(max)
; T
j
= 150
°
C;
exponential waveform; gate open
circuit; see
Figure 12
I
TM
= 40 A; V
D
= V
DRM(max)
;
I
G
= 100 mA; dI
G
/dt = 5 A/
μ
s
V
DM
= 0.67
×
V
DRM(max)
; T
j
= 150
°
C;
I
TM
= 20 A; V
R
= 25 V;
(dI
T
/dt)
M
= 30 A/
μ
s; dV
D
/dt = 50 V/
μ
s;
R
GK
= 100
-
300
-
V/
μ
s
t
gt
gate-controlled turn-on
time
commutated turn-off
time
-
2
-
μ
s
t
q
-
70
-
μ
s
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BT151-1000RT,127 功能描述:SCR Thyristor SCR 1KV 13 1A 3-Pin (3+Tab) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT151-500 制造商:TGS 制造商全稱:Tiger Electronic Co.,Ltd 功能描述:Triacs sensitive gate
BT151-500C 功能描述:SCR THYRISTOR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT151-500C,127 功能描述:SCR THYRISTOR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT151-500C127 制造商:NXP Semiconductors 功能描述:Thyristor