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參數(shù)資料
| 型號： | BT150SSERIES |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶閘管邏輯電平 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BT150SSERIES |
Philips Semiconductors
Product specification
Thyristors
logic level
BT150S series
BT150M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
3.0
UNIT
K/W
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 110 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
MIN.
-
-
-
-
-
0.1
-
TYP.
15
0.17
0.10
1.23
0.4
0.2
0.1
MAX.
200
10
6
1.8
1.5
-
0.5
UNIT
μ
A
mA
mA
V
V
V
mA
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
t
q
Circuit commutated
turn-off time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; R
GK
= 100
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5 mA;
dI
G
/dt = 0.2 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C; I
TM
= 8 A;
V
R
= 10 V; dI
TM
μ
s;
dV
D
/dt = 2 V/
μ
s; R
GK
= 1 k
MIN.
-
TYP.
50
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
-
100
-
μ
s
October 1997
2
Rev 1.100
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