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參數(shù)資料
| 型號： | BT148M-600Z |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors logic level(可控硅邏輯電平) |
| 中文描述： | 4 A, 600 V, SCR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BT148M-600Z |
Philips Semiconductors
Product specification
Thyristors
logic level
BT148S-600Z
BT148M-600Z
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivated, sensitivegate thyristorin
a plastic envelope, suitable for surface
mounting, intended for use in general
purpose switching
applications. These devices feature a
gate-cathode reverse breakdown voltage
specification.
They
directly to microcontrollers, logic integrated
circuits and other low power gate trigger
circuits.
SYMBOL
PARAMETER
MAX.
UNIT
BT148S
(or BT148M)
-
Repetitive peak off-state
voltage
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
600Z
600
and
phase
control
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
V
2.5
4
35
A
A
A
can
be
interfaced
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
cathode
gate
2
anode
anode
3
gate
cathode
tab
anode
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V
DRM
, V
RRM
Repetitive peak off-state voltage
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak on-state
current
CONDITIONS
MIN.
-
-
-
MAX.
600
1
2.5
4
UNIT
V
A
A
half sine wave; T
≤
111 C
all conduction angles
half sine wave; T
j
= 25 C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
-
-
-
-
35
38
6.1
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of on-state I
TM
= 10 A; I
= 50 mA;
current after triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction temperature
A
2
s
A/
μ
s
dI
G
/dt = 50 mA/
μ
s
I
GM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
2
5
A
W
W
C
C
over any 20 ms period
0.5
150
125
2
-40
-
1
2
3
tab
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
2
Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
September 1997
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT148S-600Z | Thyristors logic level |
| BT148W-400R | Thyristors logic level(可控硅邏輯電平) |
| BT148W | Thyristors logic level |
| BT148WSERIES | Transient Voltage Suppressor Diodes |
| BT148W-500R | Thyristors logic level(可控硅邏輯電平) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT148S-600Z | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level |
| BT148SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors logic level |
| BT148W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level |
| BT148W_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors logic level |
| BT148W-400R | 制造商:NXP Semiconductors 功能描述:THYRISTOR 1A 400V SOT-223 |
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