參數(shù)資料
型號(hào): BT148-600R
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Logic level thyristor
中文描述: 邏輯電平可控硅
封裝: BT148-600R<SOT82 (SOT82)|<<http://www.nxp.com/packages/SOT82.html<1<week 1, 2005,;
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 103K
代理商: BT148-600R
Semiconductors
Product specification
Thyristors
logic level
BT148 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
-
-
2.5
K/W
R
th j-a
in free air
-
95
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
I
L
I
H
V
T
V
GT
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 110 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
-
-
-
-
-
15
0.17
0.10
1.23
0.4
0.2
0.1
200
10
6
1.8
1.5
-
0.5
μ
A
mA
mA
V
V
V
mA
0.1
-
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
V
= 67% V
; T
= 125 C;
exponential waveform; R
GK
= 100
Ω
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5 mA;
dI
G
/dt = 0.2 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C; I
TM
= 8 A;
V
R
= 10 V; dI
TM
μ
s;
dV
D
/dt = 2 V/
s; R
GK
= 1 k
Ω
-
50
-
V/
μ
s
t
gt
-
2
-
μ
s
t
q
-
100
-
μ
s
October 1997
2
Rev 1.300
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