參數(shù)資料
型號(hào): BT145-500R
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Thyristors
中文描述: 25 A, 500 V, SCR, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 40K
代理商: BT145-500R
Philips Semiconductors
Product specification
Thyristors
BT145B series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.0
UNIT
K/W
minimum footprint, FR4 board
-
55
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 30 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
MIN.
-
-
-
-
-
0.25
-
TYP.
5
25
20
1.1
0.6
0.4
0.2
MAX.
35
80
60
1.5
1.0
-
1.0
UNIT
mA
mA
mA
V
V
V
mA
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
t
q
Circuit commutated
turn-off time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
I
TM
= 40 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 50 A; V
R
TM
/dt = 30 A/
μ
s;
dV
D
/dt = 50 V/
μ
s
MIN.
200
TYP.
500
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
-
70
-
μ
s
May 1997
2
Rev 1.000
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