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參數(shù)資料
| 型號(hào)： | BT139X-800F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs(雙向可控硅) |
| 中文描述： | 800 V, 16 A, TRIAC |
| 封裝： | PLASTIC, ISOLATED TO-220, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | BT139X-800F |
Philips Semiconductors
Product specification
Triacs
BT139X series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
100
0
0.5
1
1.5
2
2.5
3
BT139
T50
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
0
10
20
30
40
50
BT139
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.195 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT139
tp / s
Zth j-hs (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
unidirectional
bidirectional
with heatsink compound
without heatsink compound
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
9.3
dV/dt (V/us)
5.6
dIcom/dt =
20 A/ms
16
off-state dV/dt limit
BT139 SERIES
BT139...F SERIES
12
7.2
BT139...G SERIES
September 1997
5
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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