參數(shù)資料
型號: BT139X-800E
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Triacs sensitive gate(雙向可控硅敏感門)
中文描述: 800 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: PLASTIC, ISOLATED TO-220, FULL PACK-3
文件頁數(shù): 4/6頁
文件大?。?/td> 49K
代理商: BT139X-800E
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139X series E
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
BT139E
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
0
10
20
30
40
50
BT139
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.195 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT139
tp / s
Zth j-hs (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
unidirectional
bidirectional
with heatsink compound
without heatsink compound
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
September 1997
4
Rev 1.200
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