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參數資料
| 型號： | BT139F-600G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs |
| 中文描述： | 600 V, 16 A, TRIAC |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 51K |
| 代理商： | BT139F-600G |
Philips Semiconductors
Product specification
Triacs
BT139F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance
junction to heatsink
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
4.0
5.5
-
K/W
K/W
K/W
R
th j-a
Thermal resistance
junction to ambient
55
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
...F
UNIT
BT139F-
...
...G
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
5
8
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
10
22
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
7
40
60
40
60
30
40
60
40
60
30
1.6
1.5
-
60
90
60
90
60
mA
mA
mA
mA
mA
V
V
V
20
8
10
6
1.2
0.7
0.4
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
February 1996
2
Rev 1.100
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BT139F600H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|16A I(T)RMS|SOT-186 |
| BT139F700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|16A I(T)RMS|SOT-186 |
| BT139F700E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|16A I(T)RMS|SOT-186 |
| BT139F700G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|16A I(T)RMS|SOT-186 |
| BT139F800 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|800V V(DRM)|16A I(T)RMS|SOT-186 |
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