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參數(shù)資料
| 型號： | BT139BSERIESH |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 雙向高抗干擾 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 51K |
| 代理商： | BT139BSERIESH |
Philips Semiconductors
Product specification
Triacs
BT139B series
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
≤
99C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
20
0
5
10
15
20
25
= 180
120
90
60
30
BT139
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
119
113
107
101
95
1
-50
0
50
Tmb / C
100
150
0
5
10
15
20
BT139
99 C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
BT139
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T2- G+ quadrant
0
0.1
1
10
10
20
30
40
50
BT139
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
50
100
150
BT139
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
October 1997
3
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BT139F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT139F-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT139F-500F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT139F-500G | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
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