參數(shù)資料
型號: BT139-800F
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Triacs(雙向可控硅)
中文描述: 800 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 46K
代理商: BT139-800F
Philips Semiconductors
Product specification
Triacs
BT139 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope,
intended
applications
requiring
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications include motor control,
industrial
and
domestic
heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
use
in
high
BT139-
BT139-
BT139-
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
Typical
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
lighting,
I
T(RMS)
I
TSM
16
140
16
140
16
140
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
99 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
-
-
-
140
150
98
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
相關(guān)PDF資料
PDF描述
BT139-800H Triacs high noise immunity
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參數(shù)描述
BT139-800G 制造商:NXP Semiconductors 功能描述:Thyristor TRIAC 800V 170A 3-Pin(3+Tab) TO-220AB
BT139-800G,127 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BT139-800H 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs high noise immunity
BT139B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs high noise immunity
BT139B_SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs