參數(shù)資料
型號(hào): BT139-800E
廠商: NXP Semiconductors N.V.
元件分類(lèi): 參考電壓二極管
英文描述: 4Q Triac
中文描述: 4Q雙向可控硅
封裝: BT139-800E<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁(yè)數(shù): 3/14頁(yè)
文件大?。?/td> 186K
代理商: BT139-800E
BT139-800E
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2011
3 of 14
NXP Semiconductors
BT139-800E
4Q Triac
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
I
T(RMS)
Parameter
repetitive peak off-state voltage
RMS on-state current
Conditions
Min
-
-
Max
800
16
Unit
V
A
full sine wave; T
mb
99 °C; see
Figure 1
;
see
Figure 2
; see
Figure 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4
; see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2+ G+
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2+ G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2- G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2- G+
I
TSM
non-repetitive peak on-state
current
-
155
A
-
-
-
170
120
50
A
A
2
s
A/μs
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
-
50
A/μs
-
50
A/μs
-
10
A/μs
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
-
-
-
-
-40
-
2
5
5
0.5
150
125
A
V
W
W
°C
°C
over any 20 ms period
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
Fig 2.
RMS on-state current as a function of mounting
base temperature; maximum values
surge duration (s)
10
2
10
1
10
1
001aab090
20
30
10
40
50
I
T(RMS)
(A)
0
T
mb
(
°
C)
50
150
100
0
50
001aab091
10
5
15
20
I
T(RMS)
(A)
0
(1)
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