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參數(shù)資料
| 型號(hào)： | BT139-600F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs |
| 中文描述： | 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 39K |
| 代理商： | BT139-600F |
Philips Semiconductors
Product specification
Triacs
BT139 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated triacs in a plastic envelope,
intendedforuseinapplicationsrequiring
high bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications
include
industrial and domestic lighting, heating
and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BT139-
BT139-
BT139-
600
600F
800
800F
800G
800
Typical
control,
motor
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600
V
I
T(RMS)
I
TSM
16
140
16
140
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
600
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
99 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
-
-
-
140
150
98
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
April 2003
1
Rev 1.500
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT139-600G | Triacs |
| BT139-700 | TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
| BT139-700E | TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
| BT139-700G | TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
| BT139-700H | TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT139-600G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT139-600G0Q | 功能描述:BT139-600G0/SIL3P/STANDARD MAR 制造商:ween semiconductors 系列:- 包裝:管件 零件狀態(tài):在售 三端雙向可控硅類型:標(biāo)準(zhǔn) 電壓 - 斷態(tài):600V 電流 - 通態(tài)（It（RMS））（最大值）:16A 電壓 - 柵極觸發(fā)（Vgt）（最大值）:1V 電流 - 不重復(fù)浪涌 50，60Hz（Itsm）:155A，170A 電流 - 柵極觸發(fā)（Igt）（最大值）:100mA 電流 - 保持（Ih）（最大值）:60mA 配置:單一 工作溫度:125°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220AB 標(biāo)準(zhǔn)包裝:1,000 |
| BT139-600G0TQ | 功能描述:BT139-600G0T/SIL3P/STANDARD MA 制造商:ween semiconductors 系列:- 包裝:管件 零件狀態(tài):在售 三端雙向可控硅類型:標(biāo)準(zhǔn) 電壓 - 斷態(tài):600V 電流 - 通態(tài)（It（RMS））（最大值）:16A 電壓 - 柵極觸發(fā)（Vgt）（最大值）:1V 電流 - 不重復(fù)浪涌 50，60Hz（Itsm）:155A，170A 電流 - 柵極觸發(fā)（Igt）（最大值）:100mA 電流 - 保持（Ih）（最大值）:60mA 配置:單一 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220AB 標(biāo)準(zhǔn)包裝:1,000 |
| BT139-600H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs high noise immunity |
| BT139-60DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:4Q Triac High blocking voltage capability |
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