參數(shù)資料
型號(hào): BT138Y-600E
廠商: NXP Semiconductors N.V.
元件分類(lèi): 參考電壓二極管
英文描述: 4Q Triac
中文描述: 4Q雙向可控硅
封裝: BT138Y-600E<SOT78D (TO-220AB)|<<http://www.nxp.com/packages/SOT78D.html<1<,;
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 82K
代理商: BT138Y-600E
BT138Y_SER_E_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 June 2008
2 of 12
NXP Semiconductors
BT138Y series E
12 A four-quadrant triacs, sensitive gate, insulated
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/
μ
s.
Table 2.
Type number
Ordering information
Package
Name
TO-220
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220
Version
SOT78D
BT138Y-600E
BT138Y-800E
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
repetitive peak off-state voltage
Limiting values
Conditions
Min
Max
Unit
BT138Y-600E
BT138Y-800E
full sine wave; T
mb
85
°
C; see
Figure 4
and
5
full sine wave; T
j
= 25
°
C prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
t
p
= 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
T2+ G+
T2+ G
T2
G
T2
G+
[1]
-
600
800
12
V
V
A
-
-
I
T(RMS)
RMS on-state current
I
TSM
non-repetitive peak on-state current
-
-
-
95
105
45
A
A
A
2
s
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
-
-
-
-
-
-
-
40
-
50
50
50
10
2
5
0.5
+150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
W
W
°
C
°
C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
相關(guān)PDF資料
PDF描述
BT138Y-800E 4Q Triac
BT139-600E 4Q Triac
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BT139-800E 4Q Triac
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